• Spin-coater
– Rotational speed: 100 to 12.000 rpm.
– Vacuum chucks: 45 and 100 mm diameters. Designed to locked substrates firmly, without deflection, and operate at very high rotational speed.
– Fragment adapters: 3 to 10 mm; 5 to 25 mm; 10 to 50 mm. Holders with an O-ring seal to maintain the vacuum level and at the same time cushion the substrate.
• Oven
– Temperature range: from 40°C to 250°C.
– Stability: ± 0.5°C at 100°C
– Uniformity: ± 1°C at 100°C
• Optical Microscopy
– The Epi-illuminator with 12V/100w halogen lamp allows bright images to be obtained irrespective of the observation method used: brightfield, darkfield, Nomarski or polarized observations.
– Microscope objective lenses: 5x, 10x, 20x, and 100x.
– Minimum Fine focus gradation: 1 µm.
– Microscope camera head (1380×1027 pixels) ideal for image acquisition.
– Software specially designed to measure the distances of the features in the images. With these data, it is able to establish a scale bar that can be displayed on the image.
• Profilometer
– Computer controlled measurements
– High-resolution camera for color video of a 2.6 mm area.
– Variable intensity illumination for viewing samples with differing reflectivity.
– Stylus radius: 2.5 µm and 5 µm
– Stylus tracking force: 1-15 mg
– Vertical Range: up to 262 µm
– Scan Length Range: from 50 µm to 30 mm
– Vertical Resolution: down to 1 Å
– Horizontal Resolution is controlled by the scan speed
– Mechanical and optical components for sample placement, viewing and scanning.
– Manual Stage X-Y Position and sample stage rotation.
• Interferometer
– Measurement modes:
o Vertical Shift Interferometry (VSI), based on white light vertical scanning interferometry, is used for measuring features in the range of 140 nm to several µm.
o Phase Shift Interferometry (PSI), based on optical phase shifting, is dedicated to roughness measurements. Small features (1 to 140 nm) can be measured.
– The system has an automated stitching stage for large area coverage.E40
– Light Source: tungsten halogen lamp. Its brightness can be adjusted.
– 2 objective lenses included with the interferometer are available: Michelson (5.0X) and Mirau (50X).
– Field-of-View (FOV) Lenses available: 0.5, 1.0 and 2.0. FOV are lenses placed between the camera and the objective lens to adjust the field size of view.
– CCD camera to transfer the images to a computer for analysis.
– Software Vision32®. Enables advanced calculations of various surface parameters and image processing.
– Performance:
o Vertical measurement range: 0.1 nm to 1 mm
o Vertical resolution: 1 < 1 Å Ra
o Vertical scan speed up to 7.2 µm/sec
o Lateral spatial sampling 0.08 to 13.1 µm
o Field-of-View 8.24 mm to 0.05 mm (larger areas with data stitching mode)
• Plasma Cleaner
•- Processing method available: Oxygen or air plasma
•- Chamber dimensions: 3” diameter by 7” deep
•- Adjustable RF Frequency: 8 -12 MHz
•- Power settings: Low (6.8 W), medium ( 10.5 W) and high (18 W)
• Electron-beam evaporator
Univex 450B (Oerlikon Leybold Vacuum, Germany)
Adapted for sputtering, thermal evaporation and electron beam processes.
Thin film coatings can be deposited on a wide variety of substrate materials such as: metals, plastics, semiconductors, ceramics and glass.
Substrate sizes that can be accommodated in the machine range anywhere from 1mm (any shape) up to 254mm (diameter).
Evaporation:
• The system contains two material pockets for deposition of single and multilayers.
Electron Beam Physical Vapor Deposition or EBPVD
• The system contains four material pockets for deposition of single and multilayers.
Sputtering
• DC sputtering for conducting materials. Up to 1000W
• RF sputtering for dielectric materials. Up to 600W
• Wet Etching
Chemical bath system with several baths built into a safety cabinet made of anti-corrosive material (polypropylene). The cabinet is a closed unit and incorporates a ventilation system.
With the chemical bath system we can easily adapt the contents according to the requirements of the process, taking into account the polymer, resins or material to be etched.
• Laser Lithography (Mask Plotter)
•- Optical autofocus using 4 mm write head.
•- Minimum feature size: 1.0 µm (200 nm pixel size, 5.7 mm2/min writing speed).
•- Expose small parts samples up through 8” wafers, including masks blanks for photomask fabrication.
•- Diode laser: 405 nm wavelength, 50 mW max. power.
•- Back to front side alignment (alignment accuracy: 250 nm).
•- Grayscale exposure for 3D structures.
•- Stability of the system ensured by a climate chamber that provides constant temperature (±0.1°C).
•- Equipped with an interferometer stage for maximum alignment accuracy.
•- The conversion software accepts standard CAD formats: CIF, DXF and GDSII.
• UV optical Lithography (Mask Aligner)
MJB4 Mask Aligner (SÜSS Microtech, Munich, Germany) is a precision instrument for high-resolution photolithography and is intended for use in research laboratories, small-series production and pilot projects.
The flexibility of the MJB4 is unsurpassed when exposing standard wafers and substrates and irregularly shaped substrates with a diameter of up to 100 mm or 4”x4” and various thicknesses.
• Hg lamp, 305nm to 450 nm wavelength and 350 W power.
• Soft-contact and hard-contact alignment. Adjusting range between 0 to 50 mm.
• 10x Optical microscope with diffraction reducing optics.
• 5” (125mm) Cr mask adapter available.
• Substrate size: from 10 mm to 4” (100 mm), thicknesses between 0.1 to 4 mm.
• Minimum resolution: 1um.
• Exposure modes: fixed power or fixed intensity.
