• ToF-SIMS (Time of the Flight Secondary Ion Mass Spectroscopy)
ION-TOF IV (IONTOF, Münster, Germany) equipped with the state-of-the –art Bi cluster primary ion gun for analysis, and O2 and Cs ion guns for sputtering in the depth profiling mode.
Charge compensation capability using a pulsed electron-gun and/or O2 flood gas allows surface analysis and depth profiling of highly insulating samples
Large sample stage capable of holding wafers up to 3″ in diameter/width and 0.5″ in thickness. Samples sizes from few mm up to 10cm. Motorized sample stage that allows for automated analysis of large areas. Heating/cooling stage.
• High mass resolution, to distinguish species of similar nominal mass (mass resolution is at least 0.00x amu); Particles with the same nominal mass (e.g. Si2 and Fe, both with amu = 56 ) can be clearly distinguish.
• Mass range of 0-10,000 amu; ions (positive or negative), isotopes, and molecular compounds (including polymers, organic compounds, and up to amino acids fragments) can be detected.
• High sensitivity for trace elements or compounds, on the order of ppm to ppb for most species;
• Elemental and chemical mapping on a sub-micron scale;
• Depth profiling capabilities; sequential sputtering of surfaces allow analysis of elemental composition on materials from 1nm up to 10µm in depth (typical sputtering rates are ~10nm/minute).
• Retrospective analysis. Every pixel of a ToF-SIMS map represents a full mass spectrum. This allows an analyst to retrospectively produce maps for any mass of interest, and to interrogate regions of interest (ROI) for their chemical composition via computer processing after the dataset has been instrumentally acquired.
• Surveys of all masses on material surfaces; these may include single ions (positive or negative), individual isotopes, and molecular compounds;
• Surface analysis of insulating and conducting samples;